Abstract

We investigate qualitatively and semiquantitatively the effects on computed dielectronic-recombination rate coefficients of including mixing between basis states of two or more configurations, as opposed to the single-configuration approximation. We have made model-parameter studies for two-electron systems, and have also considered physically realistic three- and four-electron systems. We have attempted to categorize the various circumstances under which configuration-interaction effects are significant, but overall effects appear to be generally small---usually no more than 10--20 %.

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