Effects of conduction band non-parabolicity and matrix material on THG process in GaAs QD

Abstract

We investigate theoretically the third harmonic generation (THG) process in the singly charged GaAs quantum dot (QD). The effective mass approximation is used to obtain the energy levels and the wavefunctions. The potential is considered to be of finite type, with and without the effect of non-parabolicity of the conduction band. The effect of the conduction band nonparabolicity is included using the Kane’s model. Within the framework of the density matrix approach, THG nonlinear optical process is investigated in THz region for different dot radii of GaAs QD embedded in three different matrices, viz: Ga1-yAlyAs, Al2O3 and Si3N4.