Abstract
Single-phase electron-doped manganite thin films with nominal composition of La0.7Ce0.3MnO3(LCeMO) have been prepared on SrTiO3(100) substrates by pulsed laser deposition. The conditions for obtaining purely single-phase LCeMO films lie within a very narrow window of substrate temperature (Ts∼720°C) and laser energy density (ED∼2J∕cm2) during deposition. In situ postdeposition annealing, mainly to relax the possible epitaxial in-plane tensile strain between the film and the substrate, leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. This is indicative of a strong coupling between the electron and lattice degree of freedom.
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