Effects of composition and thickness on the electrical properties of indium oxide/tin oxide multilayered films

Abstract

Indium oxide/tin oxide multilayered films with a 2 nm pair thickness were deposited on glass substrates at temperatures lower than 100° C by an ion-beam sputtering method. The structure, electrical properties and visible transmissivity were investigated as a function of composition and the total thickness on as-deposited and annealed films. X-ray diffraction analysis showed that the as-deposited 200 nm thick film (with 0.15 nm tin oxide layers) was partially crystalline and films thinner than 100 nm were amorphous or microcrystalline. The roomtemperature resistivity of as-prepared films increased with the increase of an average tin oxide layer thickness from ∼0.05 to ∼0.3 nm (ideal monolayer thickness) under a constant total thickness ∼100 nm. We observed a decrease of the Hall mobility with the increase of the total film thickness from 10 to 200 nm in as-deposited samples containing 0.15 nm tin oxide layers.