Effects of composition and structure on hydrogen incorporation in tungsten oxide films deposited by sputtering

Abstract

The effects of composition and structure on hydrogen incorporation in tungsten oxide films were investigated. Films were deposited on carbon and SiO 2 substrates using a reactive sputtering by varying the substrate temperature from 30 to 600 °C in argon and oxygen mixture. The films were characterized using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and Raman scattering. XRD patterns showed amorphous structure in the films deposited below 400 °C and (0 1 0) oriented monoclinic WO 3 in the films deposited beyond 400 °C. The results of RBS and ERDA indicated that hydrogen concentration in the amorphous films increased from 0.1 to 0.7 H/W with changing the composition from WO 0.25 to WO 3. The hydrogen concentration in WO 3 films decreased to 0.4 H/W with increasing the substrate temperature during deposition. The Raman spectra of the WO 3 films revealed that decreasing of W 6+ O terminals was related to decreasing of the hydrogen concentration. It was considered that the incorporated hydrogen in tungsten oxide films was bonded at the end of W 6+ O terminals.