Abstract
Effects of Co doping concentration on the microstructure and the photoluminescent properties of Zn0.95Cu0.05O thin films synthesized by a sol–gel method were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, room-temperature photoluminescence, UV transmission spectrometer. An analysis of the O 1s peak of ZnO film showed that the concentration of oxygen vacancies increases with the Co doping level. We also revealed that the introduction of Co ions causes the valence state of Cu to change from +2 to +1 as the Co concentration level exceeds 1%. The Eg of Zn0.95Cu0.05O films shows a blueshift from 3.01 to 3.14eV with increasing Co doping level.
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