Abstract
We propose an ultrathin body silicon nanocrystal memory with a large threshold voltage shift (ΔVth) and a small write/erase threshold voltage (Vth) distribution. Experimental results show that ΔVth increases when body thickness decreases to 6 nm. Although ΔVth also increases in an ultranarrow channel, the ultrathin-body memory has a much smaller write/erase Vth distribution than the ultranarrow-channel memory. It is confirmed by simulation that a large ΔVth in an ultranarrow channel originates from a larger increase in the potential of a thin body than in that of a thick body.
Published Version
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