Abstract

InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (tITO, respectively, 6, 9, 12, and 15 nm) on device performance and positive bias stress (PBS) stability of the ITO TFTs are examined. We found that content of oxygen defects positively correlates with tITO, leading to increases of both trap states as well as carrier concentration and synthetically determining electrical properties of the ITO TFTs. Interestingly, the ITO TFTs with a tITO of 9 nm exhibit the best performance and PBS stability, and typical electrical properties include a field-effect mobility (µFE) of 37.69 cm2/Vs, a Von of −2.3 V, a SS of 167.49 mV/decade, and an on–off current ratio over 107. This work paves the way for practical application of the ITO TFTs.

Highlights

  • In high-performance, robust are fabricated at a maximum process

  • We investigate the effects of t on the electrical characteristics cess temperature of

  • We investigate the effects of t on the electrical characteristics cess temperature of 100 °C

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Summary

Introduction

Metal-oxide thin-film transistors (TFTs) are recognized as a promising alternative to conventional hydrogenated amorphous silicon (a-Si:H) TFTs because of high performance, feasibility for flexible display, and good process compatibility with the a-Si:H TFTs [1,2,3]. Despite of these advantages, mobility and stability of metal-oxide TFTs need to be further improved to meet the increasing demands for advanced displays of fast frame rate, ultrahigh resolution, and large area [4,5,6]. Membranes 2021, 11, 929 stress (PBS) stability, and threshold voltage shift (∆VTH) is 0.46 V under 1000 s, +1 MV/cm stress

Fabrication of ITO schematic
70 W and pressure by of sputtering
Characterization
Material
D DD tincreases
Conclusions
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