Abstract
Polycrystalline CdTe films were grown on 7059 Corning glass substrates at room temperature by sputtering from a pure CdTe target and by co-sputtering from a composite CdTe–Cd target. The electrical, optical and structural properties of the films were analyzed as a function of their Cd concentration. It was found that the films grown from the pure CdTe target were Cd-deficient with electrical resistivity of about 10 7–10 8 Ωcm and those grown from the CdTe–Cd target were Cd-rich with electrical resistivity of the order of 10 3 Ωcm. Dark electrical current vs 1/K B T measurements showed that the CdTe films with low cadmium content (<50 at.%) exhibit an unusual current peak in the range of 1/K B T=40–60 eV −1. When the cadmium composition in the CdTe films approaches 50 at.%, this effect vanishes and the current has an exponential behavior for 1/K B T>40 eV −1. The current peak was associated with the presence of Cd vacancies in the CdTe lattice.
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