Effects of carrier-velocity saturation on the characteristics of short channel MOSFETs with lightly doped drains

Abstract

physica status solidi (a)Volume 131, Issue 1 p. K77-K80 Short Note Effects of carrier-velocity saturation on the characteristics of short channel MOSFETs with lightly doped drains M. B. Lee, M. B. Lee Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Search for more papers by this authorJ. I. Lee, J. I. Lee Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Search for more papers by this authorK. N. Kang, K. N. Kang Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Search for more papers by this authorK. S. Yoon, K. S. Yoon Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Information Engineering Department, Korea University, Jochiwon, Chungnam 339–800, KoreaSearch for more papers by this authorS. Hong, S. Hong Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Electrical Engineering Department, Korea Advanced Institute ofence and Technology, 400, Kusong-Dong, Youson-Ku, Taejon 305–701, KoreaSearch for more papers by this authorK. Y. Lim, K. Y. Lim Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Physics Department, Jeonbuk National University, Jeonjoo, Jeonbuk 560–756, KoreaSearch for more papers by this author M. B. Lee, M. B. Lee Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Search for more papers by this authorJ. I. Lee, J. I. Lee Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Search for more papers by this authorK. N. Kang, K. N. Kang Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Search for more papers by this authorK. S. Yoon, K. S. Yoon Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Information Engineering Department, Korea University, Jochiwon, Chungnam 339–800, KoreaSearch for more papers by this authorS. Hong, S. Hong Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Electrical Engineering Department, Korea Advanced Institute ofence and Technology, 400, Kusong-Dong, Youson-Ku, Taejon 305–701, KoreaSearch for more papers by this authorK. Y. Lim, K. Y. Lim Optical Electronics Laboratory, Korea Institute ofence and Technology, Seoul Physics Department, Jeonbuk National University, Jeonjoo, Jeonbuk 560–756, KoreaSearch for more papers by this author First published: 16 May 1992 https://doi.org/10.1002/pssa.2211310149Citations: 1 Cheongryang, P.O. Box 131, Seoul 130–650, Korea. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume131, Issue116 May 1992Pages K77-K80 RelatedInformation