Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate

Abstract

In this work, the effects of carbon pre-geramanidation implantation on the thermal stability of NiGe and dopant segregation on both n-type and p-type Ge substrate were investigated systematically. As-prepared NiGe films with carbon pre-germanidation implantation to different doses were characterized by means of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscope (X-TEM) and secondary ion mass spectroscopy (SIMS). The presence of carbon is proved to improve the thermal stability of NiGe formed on both n- and p-type Ge significantly, as well as to lead to dopant segregation (DS) of P and B at the NiGe/Ge interface. The homogeneous distribution of C within NiGe films and stuffing of C atoms at the NiGe/Ge interface is responsible for the enhanced thermal stability of NiGe and DS of P and B during germanidation process.