Abstract

Silicon is widely used in the semiconductor industry and has recently become very attractive as a lithium ion battery anode due to its high capacity. However, volume changes associated with repeated lithiation–delithiation cycles expose fresh silicon surfaces to the electrolyte, causing irreversible side reactions. Moreover, silicon suffers from a poor electronic conductivity at a low lithium content. Carbon impurities originating at synthesis or resulting from subsequent contact with other electrode components are often neglected. However, atomistic simulations reveal that dissolved carbon decreases the local potential energy surface by drawing the electron density from silicon to form polar covalent C–Si bonds that are stronger than the non-polar covalent Si–Si bonds they replace. This leads to a higher density and elastic stiffness, regardless of the interstitial lithium concentration. Substitutional carbon also reduces the mobility of silicon self-vacancies and interstitial lithium by increasing their diffusion barriers by 24.7 and 27.3 kJ mol−1, respectively. Moreover, the [carbon, silicon vacancy] complex is basically stable, while the [carbon, lithium] complex is found to become stable against both single defects at a spacing of 4.72 Å. The minimum energy paths ultimately demonstrate that both the interstitialcy and dissociative mechanisms are mainly responsible for carbon diffusion in silicon.

Highlights

  • For many decades, silicon (Si), which is one of the most abundant minerals on the Earth, has been widely used in semiconductor technologies

  • Atomistic simulations reveal that dissolved carbon decreases the local potential energy surface by drawing the electron density from silicon to form polar covalent C–Si bonds that are stronger than the non-polar covalent Si–Si bonds they replace

  • Its great energetic potential as an anode material lies in the thermodynamic stability of highly lithiated phases,1 leading to very high gravimetric and volumetric capacities (4200 mA h g−1; 9660 mA h cm−3 referenced to the delithiated state and 2010 mA h g−1; 2370 mA h cm−3 referenced to the lithiated state)

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Summary

INTRODUCTION

Silicon (Si), which is one of the most abundant minerals on the Earth, has been widely used in semiconductor technologies. Several experimental investigations showed that carbon diffuses in crystalline silicon via at least four distinct mechanisms: direct interstitial, vacancy-mediated, interstitialcy (kick-out18), and dissociative (Frank–Turnbull).. Several experimental investigations showed that carbon diffuses in crystalline silicon via at least four distinct mechanisms: direct interstitial, vacancy-mediated, interstitialcy (kick-out18), and dissociative (Frank–Turnbull).18,19 The latter two involve the interplay of defect complexes. We calculate the elastic properties of carbon-doped silicon, which determine its bulk response to mechanical loading These results provide a quantitative basis for describing the interactions between carbon, lithium, and silicon by describing crystalline structures in the silicon-rich region of their ternary phase diagram and physical insights into ternary C–Li–Si systems, which, in their amorphous forms, are at the heart of silicon-based anodes for lithium ion batteries

Point defect formation
Point defect migration
Elastic constants
Computational parameters
Structural environment of carbon point defects
Defect formation in crystalline silicon
Diffusivity of carbon point defects
Silicon mobility near carbon defects
Lithium mobility near carbon defects
Mechanical properties of silicon as a function of the carbon doping level
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