Abstract
Electrical properties of field-effect transistors are significantly degraded by charged defects formed in dielectric oxides. Here, we propose a simple method for eliminating charged defects in HfO2. Our computational and thermodynamic investigations have revealed that multivalent oxides act as an oxygen reservoir when deposited on HfO2, playing an important role in keeping the oxygen chemical potential constant throughout the oxide film. This is due to the coexistence of two stoichiometric phases in the multivalent oxide, which allows absorption or desorption of oxygen atoms depending on the ambient conditions. Our theory predicts europium oxide is the best capping material for minimizing oxygen-related charged defects in HfO2.
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