Abstract
Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h−1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.
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