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Abstract
The effects of pre-irradiation burn-in stressing on radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift in stressed, and more considerable mobility reduction in unstressed devices have been observed, confirming the necessity of performing the radiation qualification testing after the reliability screening of power MOSFETs. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects. The buildup of oxide-trapped charge appeared to be almost independent of device pre-irradiation stress, while the buildup of interface traps was somewhat less pronounced in stressed devices. Passivation of interface-trap precursors due to diffusion of hydrogen related species (originating either from package inside or gate oxide adjacent structures) from the bulk of the oxide towards the interface has been proposed as a mechanism responsible for the suppressed interface-trap buildup in pre-irradiation stressed devices.
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