Abstract
The doped polycrystalline silicon (poly-Si) is used to investigate the effects of boron on non-linear properties of trap-rich silicon-on-insulator (TR-SOI) substrates. A dip at poly-Si/Si interface in spreading resistance profiles (SRP) is found and attributed to certain combinations of the poly-Si layer and the substrate dopant levels. A multilayered SRP model is employed to explain the SRP characteristics of the poly-Si films. The non-linear performance of TR-SOI is also studied using 50 Ω coplanar waveguide (CPW) lines. The results show little impact to the second harmonic distortion (HD2) up to 1 × 1015 cm−3 boron concentration in the poly-Si layer. At boron doping levels of above 5 × 1015 cm−3 measurable deteriorations of HD2 are detected and significantly worse when boron doping level in poly-Si reaches 1 × 1017 cm−3, presumably the traps in grain boundaries of poly-Si layer are filled by doping charges.
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