Abstract
(100)-oriented (1 − x)BiFeO3–x(Bi1/2,Na1/2)TiO3 (BF–BNT) thin films with x = 0.05 were grown on LaNiO3/Si substrate by co-sputter method. It was found that BF–BNT films show better ferroelectric and piezoelectric properties than the BiFeO3 films deposited under the same condition, especially at the deposition temperature of 450 °C. The addition of small amount of BNT (x = 0.05) to BF films increases the dielectric constant to 480. The BF–BNT film piezoelectric coefficient (d33(AFM)) of the BF–BNT film deposited at 450 °C is ∼100 pm/V, which is comparable to the best value of BF-based films with substitutions of other perovskite or rare-earth elements.
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