Effects of Bi-doping on electronic structure and martensitic transformation in Ni2MnGa and Mn2NiGa MSMAs: A theoretical approach

Abstract

The effects of Bi-doping on the electronic structure, martensitic transformation and magnetic properties of Heusler alloys Ni2MnGa1-xBix and Mn2NiGa1-xBix (x = 0, 0.25, 0.5, 0.75, 1) were investigated theoretically. The substitution of Bi for Ga has a negative effect on the martensitic transformation. The total energy difference ΔEM between the martensite and austenite decreases gradually with the doping of Bi. When x = 0.5, 0.75 and 1.0 in Ni2MnGa1-xBix and x = 1.0 in Mn2NiGa1-xBix, the martensite phase becomes higher in energy comparing with the austenite. Thus the doping of Bi can lower the martensitic transformation temperature TM and finally suppresses it. The possible reasons for this trend are related to the increasing valence electron concentration e/a and cell volume V with Bi-doping. The competition between them may be ascribed further by the electron density, which combines the effect of valence electron concentration and size effect. The electron densities of Ni2MnGa1-xBix and Mn2NiGa1-xBix decrease monotonously with increasing Bi content. This agrees well with the variation of ΔEM or TM. The doping of Bi does not change the magnetic structure of Ni2MnGa1-xBix and Mn2NiGa1-xBix. The former is ferromagnetic and the latter is ferrimagnetic in both martensite and austenite state. These results can help to introduce new component like Bi to Heusler alloys and discover new functional materials in them.