Abstract
Mg2.18(Si0.3Ge0.1Sn0.6)1-yXy (X = Bi, Sb; y = 0, 0.02, 0.06) quaternary solid solutions were synthesized via solid state reaction after ball milling followed by hot-pressing. The influences of Bi and Sb doping on its thermoelectric (TE) properties, such as thermal conductivity, Seebeck coefficient, and electrical conductivity were discussed in the temperature range of 300–800 K. Our results show that Bi and Sb are effective in n-type doping. The results illustrate that the Seebeck coefficient decreases, whereas electrical conductivity increases with increasing temperature for undoped compositions. However, the electrical conductivity decreases in a metal-like behavior for the doped sample. Additionally, the samples doped with Bi0.02 and Sb0.02 show enhanced TE properties as compared to those doped with Bi0.06 and Sb0.06, respectively. A maximum ZT of 1.28 is achieved in the sample doped with Sb0.02.
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