Abstract
The effects of β-ray irradiation on the electrical characteristics of Au/SiO2/n-Si (MOS) structures have been investigated using capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The MOS structures were irradiated with beta rays at doses up to 30kGy. The C–V and G/ω–V characteristics were measured at high frequency (1MHz) and room temperature before and after β-ray irradiation. The obtained results showed that β-irradiation resulted in an increase in the barrier height ΦB, interface states Nss and depletion layer width WD obtained from reverse bias C–V measurements. In addition, the voltage dependency of the series resistance Rs profile for various radiation doses was obtained from admittance-based measurement method of (C–V and G/ω–V). Both C–V and G/ω–V characteristics indicate that the total dose radiation hardness of MOS structures may be limited by the decisive properties of the SiO2/Si interface to radiation-induced damage.
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