Abstract
The optical and electrical properties of ZnSe films grown by MBE on (100) GaAs substrates have been correlated with variations in the growth conditions. By suitably adjusting the Zn/Se beam pressure ratio (BPR) at a substrate temperature of 350°C, we have been able to grow ZnSe layers ( t ⋍ 2 μm, GR ⋍ 0.8 μm/h) with room temperature mobility μ(300 K) > 380 cm 2/V·s and carrier concentration n(300 K) < 2.5×10 16 cm -3. The 9 K photoluminescence spectra for such films are strongly dominated by a donor-bound exciton peak ( I x, h ̷ ω=2.7955 eV, δω⋍3.0 meV ); free exciton and deep level emission intensities are smaller than I x by factor of 25 and 1600, respectively. As BPR is decreased while maintaining a constant Se flux, the mobility diminishes and the carrier concentration increases; at the same time, the donor-bound exciton peak in the PL broadens and shifts to lower energy, while a peak ( I D 1, h ̷ ω=2.782 eV ), attributable to Zn vacancies grows rapidly. SIMS measurements have been made to analyze Ga and In incorporation in the film. Both these impurities were found to be at least an order of magnitude lower than the background donor density in the film. The exact identity of the donor is still undetermined.
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