Abstract
We have applied single InP barrier layer with different thicknesses and InP/In0.52Al0.48As double-barrier layer to In0.7Ga0.3As Al2O3 metal-oxide-semiconductor field-effect-transistors (MOSFETs) and investigated their effects on device performance. In0.7Ga0.3As MOSFETs with 3 nm InP single-barrier attain 22% higher peak effective mobility while devices with 5 nm InP attain 58% higher peak mobility than the ones without barrier. Devices using InP/In0.52Al0.48As double-barrier achieve mobility enhancement at both low-field (68% at peak mobility) and high-field (55%) compared to ones without barrier. High channel mobility of 4729 cm2/V s has been obtained using InP/In0.52Al0.48As barrier and atomic-layer-deposited Al2O3 gate oxide.
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