Abstract
We present a temperature dependent line shape analysis of Ga 3d and As 3d core level photoemission data from clean GaAs(110) semiconductor surfaces. This study indicates the presence on the surface of regions with different barrier height. The existence of such barrier height inhomogeneity results in an extra broadening due to an averaging over differently pinned regions. This effect need to be taken into account in order to correctly analyze semiconductors core level line shapes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Electron Spectroscopy and Related Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
