Abstract
GaAs homojunction bipolar transistors (GaAs BTs) are attractive because of their manufacturability and high electron mobility. This paper theoretically investigates the band-gap narrowing effects on the common-emitter current gain β of GaAs BTs based on recently reported band-gap-narrowing results for GaAs taking into account interactions between free carriers and dopant ions. It is shown that, benefitting from the band-gap contractions, an n+/ p+ /n GaAs BT can possess good β as well as high cutoff frequency, contrasting with the conventional concept that n+ /p/n doping in a GaAs BT is needed in order to obtain high β. Experimental results reported in literature regarding n+ /p+ /n GaAs BTs are also discussed.
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