Abstract
Significantly improved immunity to hot-hole damage of the SiO/sub 2//Si structure is achieved by a shallow fluorine implantation into the poly-Si gate of MOS capacitors followed by a drive-in process. Compared to the nonfluorinated control, the fluorinated samples exhibit a dramatic reduction of both hole trapping probability and interface-trap generation under avalanche hole injection conditions. The degree of such an improvement increases monotonically as a function of the F implantation dose (up to 10/sup 16//cm/sup 2/). Significant decrease of the hole detrapping rate is also observed in fluorinated samples. Possible mechanisms are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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