Abstract
InGaAs/InAlAs quantum wire structures on V-grooved InP substrates have been fabricated with As2 flux and atomic hydrogen irradiation using molecular beam epitaxy. Under As2 flux, the V-grooves are preserved during the InAlAs barrier layer growth due to a small migration of the In atoms, but the V-shape is not preserved and hence the quantum wires cannot be fabricated under an As4 flux. The InGaAs quantum wires grown with atomic hydrogen have a narrow photoluminescence peak and a uniform cathode-luminescence image. These phenomena maybe caused by the absence of (311)A sidewall quantum wells due to re-evaporation of the group-III atoms by the atomic hydrogen irradiation.
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