Abstract
The static gain characteristics of N–p–N InP/GaAsxSb1−x/InP double heterojunction bipolar transistors (DHBTs) were studied as a function of the base arsenic (As) mole fraction x. Compared to the devices with a lattice-matched base (x=0.51), a current gain improvement largely arising from a base current reduction is observed in DHBTs with higher As base mole fractions (and consequently a reduced type-II conduction band discontinuity ΔEC at the emitter-base heterojunction). Both the surface periphery and the intrinsic recombination currents decrease markedly as the base arsenic concentration increases. The present work therefore unambiguously demonstrates that the emitter type-II conduction band discontinuity between the InP emitter and the GaAsxSb1−x base enhances the undesirable emitter size effects (ESEs) and increases intrinsic recombination currents directly under the emitter contact.
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