Abstract
Influence of argon (Ar) plasma pretreatment on polar and nonpolar GaN surface before the deposition of Al2O3 dielectric is investiged. The interface trap density (Dit) of polar (c-plane) GaN MOS capacitor with Ar plasma treatment is dramatically lower than that without plasma treatment. In contrast, the Dit of nonpolar (m-plane) GaN MOS capacitor with Ar plasma treatment is higher than that without plasma treatment, indicating that the polar and nonpolar GaN have differenent surface charges and chemical states.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
