Abstract
We have fabricated Pt/ZrO2/Ir memory cells with pristine and Ar+ ion bombarded ZrO2 films, which show unipolar resistive switching behaviors. Ar+ ion bombardment induces change in surface morphology and chemical states of ZrO2 films. We have found that forming voltage significantly decreases in a Pt/ZrO2/Ir memory cell whose Ar+ ion bombarded ZrO2 film shows oxygen vacancy like defects and the largest root-mean-square (RMS) roughness. It seems that forming process may be more easily induced in an Ar+ ion bombarded ZrO2 film with higher RMS roughness mainly due to locally enhanced electric field in a region with oxygen vacancy like defects.
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