Abstract
In this paper, we fabricated and compared the photovoltaic properties of two different kinds of PEDOT:PSS buffer layer systems. The first was with the PEDOT:PSS buffer layers of different PEDOT to PSS ratios, 1 to 2.5 for Baytron P and 1 to 6 for Baytron PVP AI4083, respectively. The second system included the buffer layers with the same PEDOT to PSS ratio, but with the changed conductivities by doping with 2, 4, 6, 8, and 10 wt% of glycerol. The power conversion efficiency was governed by the series resistance of the device and the resistivity of the applied PEDOT:PSS films, while the parallel resistance and the diode rectification characteristics are affected by the ratio of PEDOT to PSS on buffer layer.
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