Abstract
Cu2ZnSnSe4 (CZTSe) thin films were deposited by RF-magnetron sputtering using a single quaternary CZTSe target. After the deposition, CZTSe thin films were annealed under different temperature ranging from 300°C to 550°C with a space of 50°C. After annealing treatment, the grain size of CZTSe thin films became bigger. XRD results showed that thin films were kesterite-type CZTSe with a preferential orientation of the grown along the (112) direction of the Cu2ZnSnSe4 lattice. The average transmittance of thin films in near infrared region increased as annealing temperature increasing from 300°C to 400°C and decreased as annealing temperature increasing further. The CZTSe thin films annealed at 450°C got very low resistivity. The thin film annealed at 400°C has a band gap of 1.48eV which is near the optimum band gap for solar cell.
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