Abstract
Dielectric ceramic thin film was fabricated on SiO2 (110) substrates by radio frequency (RF) magnetron sputtering method using a Zn-enriched (Ba0.3Sr0.7) (Zn1/3Nb2/3)O3 target followed by annealing in O2 atmosphere at different temperatures. The effects of annealing temperatures on the crystallization, compositions, microstructures, and morphologies of the ceramic thin films have been investigated in detail. The results showed that all the samples exhibited well- crystallized structures with the main phases of BaxSr1-xNb2O6, differing from the target due to volatilization of ZnO. X-ray photoelectron spectroscopy (XPS) analysis shows that only one chemical state is found for each spectrum of Ba, Nb, Sr, Zn and O photoelectron in the films. The surface root-mean-square roughnesses of the thin films decrease with the increasing in the annealing temperatures. Scanning electron microscope (SEM) shows that the surface of the films were crack-free and compact. The spherical grains become large in size with the increase in the annealing temperatures.
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