Abstract
Black silicon (b-Si) is a promising absorber material for photovoltaic (PV) application. This paper studies the effects of annealing temperature towards surface morphological and optical properties of b-Si fabricated by aluminium-assisted chemical etching (AACE) process. In this work, the AACE process is realized by depositing aluminium (Al) thin film with 12 nm thickness on crystalline silicon (c-Si) wafers by direct current (DC) sputtering, followed by annealing the wafers at 250–450 °C in nitrogen (N2) atmosphere. Subsequently, the wafers are etched in a wet chemical solution containing hydrofluoric acid (HF), hydrogen peroxide (H2O2) and deionized (DI) water for 20 min at room temperature. From the findings, annealing the sample at 400 °C leads to formation of b-Si nanopores with the deepest nanopores and the highest surface coverage. This temperature also leads to the lowest broadband reflection within 300–1100 nm wavelength region. As a result, the highest average absorption enhancement of 1.61 is achieved when the absorption of the b-Si annealed at 400 °C is normalized to the absorption of the planar c-Si reference.
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