Abstract
Abstract Na 0.5 Bi 0.5 (Ti 0.98 Fe 0.02 )TiO 3 thin films were deposited on LaNiO 3 (1 0 0)/Si substrates annealed from 450 to 600 °C using chemical solution deposition. The effects of annealing temperature on microstructure, insulating, ferroelectric and dielectric properties were characterized. All the films crystallize into a single preferential (1 0 0)-oriented perovskite structure. For different temperature ranges of 450–500 °C and 550–600 °C, the content of grain boundaries and oxygen vacancies are dominant factors affecting the leakage current, respectively. Dielectric constant-voltage curves coincide well with the polarization–electric field loops. The film annealed at 500 °C exhibits superior ferroelectricity with a remanent polarization ( P r ) of 27.6 μC/cm 2 and a dielectric constant of 485 at 10 kHz due to the relatively homogeneous larger grain size and lower leakage current. Self-polarization with a piezoelectric coefficient ( d 33 ) of 19.6 pm/V by the internal bias field has also been detected.
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