Abstract
We studied the effects of annealing temperature on the sensing properties of linear-output magnetic sensor devices fabricated using a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) Co/Pt pinned layer. Owing to the large exchange coupling of the p-SAF Co/Pt pinned layer, linear tunnel magnetoresistance (TMR) curves were observed within a wide range of over ±3 kOe. In terms of sensing properties, the MTJ after annealing at 300 °C showed the highest sensitivity of 0.033%/Oe owing to the large TMR ratio of 164%. Moreover, the achieved nonlinearity of 0.061% full scale (FS) is quite low, which is comparable to that of commercialized Hall sensors.
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