Abstract
An optimal annealing temperature and time was determined for single crystal samples of the RNi 2B 2C series, R=Gd–Lu, Y. For R=Dy–Tm, Lu and Y dramatic improvements in the low temperature resistivity, residual resistivity ratio and implicitly the electronic mean free path were found for annealing temperature T=1000 °C and annealing time t≈75–100 h. This annealing schedule is somewhat less effective in changing the temperature dependent resistivities of TbNi 2B 2C and GdNi 2B 2C but it produces dramatic changes in the resistivity of the heavy Fermion compound YbNi 2B 2C.
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