Effects of Annealing Temperature and Pressure on the Nitride-based Precursor Conversion Behaviors

Abstract

In this article, we investigate the deposition and characterization of oxide layer grown by using the trisilylamine (N(SiH3)3, TSA)-based as the precursor. The deposited silazane-based oxide film was converted as the SiO2 film by optimizing the conditions of ultraviolet curing, steaming, and high temperature annealing in N2 ambient, even with high pressure conditions. The optimum conditions consist of 650 °C steaming and 1100 °C annealing temperature in N2 ambient. In addition, the film stress can be significantly reduced at high pressure and low temperature annealing (<400 °C).