Abstract
Abstract Near-infrared (NIR) shielding properties are important for solar films. In this study, Cs x WO 3 films prepared using electron beam evaporation were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometry. The effects of annealing on NIR shielding properties and film microstructure were investigated. The results show that the NIR shielding properties of Cs x WO 3 films can be improved by annealing at 300–450 °C under pure H 2 atmosphere, the amorphous thin films being transformed to crystalline films. The Cs x WO 3 films annealed at 450 °C in pure H 2 atmosphere showed high transmittance of visible light (70%) and high NIR shielding ratio (99%).
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