Abstract
The dependence of conduction types and carrier concentrations of Hg0.79Cd0.21Te epilayers on annealing temperature and annealing pressure was studied. At 410 °C, a relation of p∝P−1Hg was observed which was explained by a defect equilibrium model. Detailed analysis of the temperature-dependent Hall coefficients indicated that the hole concentrations of the samples annealed under the above conditions were a result of close compensation of acceptors and donors on the order of 1×1017 cm−3. From Hall measurement, the acceptor ionization energies of the p-type annealed layers were found to be from 1 to 5 meV. Experiments also showed that n-type epilayers with electron concentrations on the order of 1014 cm−3 can be achieved by annealing at low temperature under Cd or Hg pressures.
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