Abstract
This paper presents new photovoltaic solar cells with Cu2ZnSnSe4/CH3NH3PbI3(MAPbI3)/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu2ZnSnSe4, MAPbI3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI3 perovskite film was deposited on Cu2ZnSnSe4 hole-transporting layer that has been annealed at different temperatures. TheseCu2ZnSnSe4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu2ZnSnSe4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650 °C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm2, and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power Pmax was as good as 1.74 mW and the device series-resistance was 17.1 Ω.
Highlights
Photovoltaic (PV) devices provide electrical energy directly from sunlight, and have been one of the promising technologies in the renewable energy industry
One-step magnetron sputtered Cu2ZnSnSe4 nano-films have been successfully applied as novel Cu-based inorganic hole-transporting materials (HTM) forMAPbI3 perovskite nanostructured photovoltaics
One-step magnetron sputtered Cu2ZnSnSe4 nano-films have been successfully applied as novel Cu-based inorganic HTM for MAPbI3 perovskite nanostructured photovoltaics
Summary
Photovoltaic (PV) devices provide electrical energy directly from sunlight, and have been one of the promising technologies in the renewable energy industry. The MAPbI3 substance favors efficient carrier generation and transport to electrodes. It can absorb sunlight radiation from ultra-violet to infrared region. Choi et al studied conjugated polyelectrolytes as the hole-transporting materials (HTM) for inverted-type perovskite solar cells [9]. FTO should be used in favor overindium-tin-oxide (ITO) as the transparent conducting oxide(TCO), when high-temperature annealing in air is in need for PV device fabrication. This is because the ITO electrical properties can be degraded in the presence of oxygen at relatively high temperature. This good transparent conductive layer could significantly decrease photon absorption at the back electrode
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