Abstract
A process was investigated to remove HfO 2 gate dielectric film that had been deposited and annealed under various conditions. The etch rate of HfO 2 annealed at 950°C was 0.14 A/min in 10% HF, but increased up to 90 A/min after Ar ion bombardment. The crystalline structure of the annealed HfO 2 films collapsed upon bombardment by Ar ions. The amorphization and rarefaction of HfO 2 by Ar ion bombardment were responsible for the dramatic increase of the etch rates. Almost no consumption of the underlying Si substrate was observed after the removal of the HfO 2 dielectric films.
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