Abstract
In this work, Bi3.25La0.75Ti3O12 (BLT) thin films were prepared by sol-gel coatings followed by rapid thermal annealing in Ar or O-2 ambient. The correlation among annealing ambient, ferroelectric characteristics and surface chemistry of the BLT thin films were investigated. The BLT thin film annealed in Ar showed weaker crystallization, less dense surface and smaller polarization value than that annealed in O-2. After 10(9) cycles, the remnant polarization of the BLT film annealed in Ar decreased to 83.5 % of the initial value while it remained 89.5 % for the sample annealed in O-2. X-ray photoelectron spectroscopy results indicated the inferior fatigue characteristics of the sample annealed in Ar was the comprehensive result of oxygen vacancies vicinity to Bi and Ti ion in the thin film.
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