Abstract
In this work, the structural, morphological and electrical properties of TiO2 thin films are studied. The phase transformation of TiO2 from anatase to rutile is occurred at a certain temperature. This transformation increases defects concentration onthe surface of the film which acts as trapping sites for carriers, thereby affecting the Fermi level of TiO2 film.Quantitative estimation of Fermi level shifting is measured in terms of work function measurement using scanning Kelvin probe measurement. Work function of TiO2 was found to decrease with increasing annealed temperature indicating shifting of Fermi level towards conduction band. Position of Fermi level plays an important role in phase transformation and electronic properties of TiO2.
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