Abstract
AbstractThe photoluminescence (PL) of silicon nanocrystals (Si-nc) obtained by ion implantation in the oxide layer of a MOS structure was measured during the application of a slowly varying electric field generated by biasing the gate electrode. As a result, both PL intensity enhancement and quenching have been observed. These reproducible intensity modulations exhibit a hysteresis effect when the applied electric field is varied and persist even after it is removed. The behavior of the current density and the absence of wavelength shift in the PL spectra during gate voltage sweeps suggest that these modulations are related to the motion of charge carriers rather than to field-induced mechanisms such as quantum-confined Stark effect (QCSE).
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