Abstract
Electrophoretic deposition was used to deposite carbon nanotubes (CNTs) on Ti-coated silicon wafers. The effects of amplitude on the CNT nanowelding were studied. The results show that CNTs are compacted and bonded with Ti at the amplitude of 30%. At higher amplitude (60% and 80%), CNTs are cut short or even destructed due to the higher ultrasonic energy and shear force. Applying nanowelding to CNT field effect transistor, the on-off ratio and transconductance are enhanced significantly at the welding amplitude of 30%.
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