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Abstract
The ZnO:Al (AZO) films were deposited on glass substrates with Al2O3 buffer layers by RF magnetron sputtering. The obtained films had the hexagonal structure and preferred orientation of (002). Compared with AZO film without buffer layer, the grain size of the film with buffer layer was increased and the conductive property was increased greatly. the grain size of AZO films reached 27.9nm for those with buffer layers. The optical property of AZO films was decreased by the buffer layers. The resistivity of AZO films with Al2O3 buffer layer was about 6.6×10-3 Ω·cm and the average transmittance was over 80% in the range of 450~900nm.
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