Abstract
ABSTRACTEffects of alloying Ni with Pt and Ta on silicide properties for CMOS technology have been studied. It was found that Pt is soluble in NiSi, which is in line with literature, whereas Ta segregates towards the surface during thermal treatment. Additionally, Ta retards NiSi formation at low temperature. Thermal stability of NiSi on Si is improved more efficiently by alloying Ni with Pt compared to Ta. Silicide/diffusion contact resistance is extracted using the Transmission Line Structure. In our experiments, contact resistivity appeared to be virtually unaffected with respect to the alloying element. Thermal stability on narrow poly Si structures was also improved when Ni was alloyed with Pt. Similar leakage currents for Ni and Ni(Pt) silicides on N+ and P+ junctions were obtained. The results presented in this work suggest that Pt is a better candidate as alloying element to improve NiSi thermal stability for CMOS processes than Ta.
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