Effects of Ag2O doping on dielectric properties of (Pb0.96La0.04)(Zr0.9Ti0.1)0.99O3 antiferroelectric ceramics

Abstract

Antiferroelectric ceramics are superior energy storage materials with high energy storage densities, small size, low price, etc. In this paper, with (Pb0.96La0.04)(Zr0.9Ti0.1)0.99O3 (PLZT4/90/10) as a representative, the effect of silver oxide doping on the dielectric properties of ceramics was investigated. PLZT4/90/10 ceramics prepared by the solid phase method was doped with 0 wt%, 0.1 wt%, 0.5 wt%, 1.0 wt% and 1.5 wt% of Ag2O, and the effect of the addition of Ag2O was analyzed on dielectric, energy storage and conductive properties. Ag+ replaces the A-position of Pb2+ in the lattice, which leads to generate more oxygen vacancy in the lattice. Incorporation of silver oxide improves the releasable energy storage density (Wre) and the energy release efficiency (η). When the content of Ag2O is 1.0%, the releasable energy density reaches the maximum value of 2.22 J/cm3 and the energy release efficiency is raised to 78.69%. The releasable energy density and the energy release efficiency are listed at different temperatures for different doping amounts. It can be seen that Ag2O doping can also promote the temperature stability of the energy storage density. In addition, the doping of Ag2O has a good effect on smoothing the temperature dependence curves of dielectric constant and improving the resistivity of ceramics of PLZT4/90/10 ceramics. As the dielectric constant, energy storage density and other aspects are concerned, Ag2O doping has a beneficial effect on the performance of capacitor applications for PLZT4/90/10 ceramics.