Effects of Ag interlayer on the optoelectrical properties of TiON films

Abstract

A sandwich structure of TiON/Ag/TiON (TAgT) multilayer films was prepared onto glass substrates using RF and DC magnetron sputtering without intentional substrate heating. The thicknesses of each layer in the TAgT films were set at 50 nm, 5 nm and 45 nm. The optoelectrical properties of the TiON films were strongly influenced by the presence of an Ag interlayer. Although the optical transmittance of the film deteriorated when an Ag interlayer was added, the films had a low resistivity of 9.0 × 10 −4 Ω cm due to increased carrier density. In addition, the TAgT films show work functions of 4.4 eV, which are suitable for organic light emitting diode (OLED) applications. The experimental results indicate that TiON film manufactured with a 5-nm thick Ag interlayer is an attractive candidate for use as a transparent electrode in large area electronic applications such as solar cells and displays.