Abstract
A theoretical model is suggested to investigate the effect of grain boundary (GB) sliding with GB diffusion accommodation on triple junction nanovoids nucleation in deformed nanocrystalline materials. Within our description, at high strain rate, nanovoids are nucleated due to GB sliding which is non-accommodated at comparatively low temperature and effectively accommodated by GB diffusion process at elevated temperature. In this paper, the corresponding energy characteristics of the pile-up of GB dislocations caused by GB sliding and GB diffusion are calculated, respectively. Then, the nucleation of nanovoid at triple junctions is studied and the equilibrium radius of nanovoid is obtained. Calculation results show that: the nucleation and the equilibrium radius of the triple junction nanovoid both depend significantly on the shear stress, the length of the pile-up and the GB structures; the accommodated GB sliding results in the suppression of nanovoid generation, and thereby promotes the ductility deformation behavior in a nanocrystalline material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
